Will contribute to more efficient, smaller and lighter industrial equipment by reducing internal inductance and incorporating an SiC chip

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of its new NX-type full-SiC (silicon carbide) power semiconductor module for industrial equipment on June 14. The module, which reduces internal inductance and incorporates a second-generation SiC chip, is expected to contribute to the realization of more efficient, smaller and lighter-weight industrial equipment.

Power semiconductors are increasingly being utilized to convert electric power extra efficiently and thereby help to lower the carbon footprint of global society. Expectations are particularly high for SiC power semiconductors because of their capability to significantly reduce power loss. The demand is expanding for high-power, high-efficiency power semiconductors capable of improving the power-conversion efficiency of components such as inverters used in industrial equipment.

Mitsubishi Electric began releasing power semiconductor modules equipped with SiC chips in 2010. The new module, which features a low-loss SiC chip and optimized electrode structure, reduces internal inductance by 47% compared to its existing predecessor, enabling reduced power loss.

Development of this SiC product have been partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO).

Product Features

1) Optimized electrode structure and SiC chip contribute to more efficient, smaller and lighter equipment

• Electrode structure optimized with laminated electrodes, etc. to achieve internal inductance of 9nH, 47% lower than that of the existing module.

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